View AWT6108_268393.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control
FEATURES
PRELIMINARY DATA SHEET - Rev 1.0 InGaP HBT Technology Integrated Power Control (CMOS) Quad Band Applications +35 dBm GSM Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55% GSM PAE 50% DCS/PCS PAE Small Footprint: 7 x 10mm Low Profile: 1.4mm Power Control Range: >50 dB GPRS Capable (Class 12) Moisture Sensitivity Level (MSL) 3 at 260 C
AWT6108
AW T
610
8
APPLICATIONS

GSM850/GSM900/DCS/PCS Handsets
20 Pin 7mm x 10mm Surface Mount Module
Dual/Tri/Quad Band PDA
PRODUCT DESCRIPTION
This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifiers power control range is typically 55dB, with the output power set by applying an analog voltage to VRAMP. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic compliant. The TX_EN is used to enable the amplifier typically with the TX burst. The BS is used to select which amplifier is enabled. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. All of the RF ports for this device are internally matched to 50 W. Internal DC blocks are provided at the RF ports.
Figure 1: Block Diagram
08/2003
AWT6108
Figure 2: Pinout (X-Ray Top View)
Table 1: Pin Description P IN 1 2 3 N AM E DCS/PCS_IN BS TX_EN D E S C R IP T ION DCS/PCS RF Input Band Select Logi c Input TX Enable Logi c Input Battery Supply Connecti on Regulated Supply Connecti on Analog Si gnal Used to Control the Output Power GSM850/900 RF Input VCC Control Input for GSM850/900 PreAmpli fi er Ground Ground P IN 11 12 13 N AM E GSM_OUT GND GND D E S C R IP T ION GSM850/900 RF Output Ground Ground Contol Voltage Output Whi ch Must be Connected to VCC2, No Decoupli ng Ground Ground
4
VBATT
14
VCC_OUT
5 6 7 8 9 10
VREG VRAMP GSM_IN VCC2 GND GND
15 16 17 18 19 20
GND GND
DCS/PCS_OUT DCS/PCS RF Output GND GND VCC2 Ground Ground VCC Control Input for DCS/PCS Pre-Ampli fi er
2
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
AWT6108
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PAR AME T E R
Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltage (VRAMP) Storage Temperature (TSTG)
MIN
0 0 -0.3 -55
M AX
7 11 1.8 150
U N IT
V dBm V C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: ESD Ratings
PAR AME T E R
ESD Threshold Voltage (RF Ports) ESD Threshold Voltage (Control Inputs)
ME T H OD
HBM HBM
R AT IN G
>250 >2.5
U N IT
V kV
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electronic discharge (ESD) during handling and mounting. Human body model (HBM) employed is resistance = 1500 W, capacitance = 100 pF.
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
3
AWT6108 Table 4: Digital Inputs PAR AME T E R Logi c Hi gh Voltage (VH) Logi c Low Voltage (VL) Logi c Hi gh Current (I H) Logi c Low Current (I L) MIN 1.2 T YP M AX VREG 0.5 30 30 U N IT V V A A
Table 5: Operating Ranges PAR AME T E R Case Temperature (TC) Supply Voltage (VBATT) Regulated Voltage (VREG) Regulated Current (IREG) TX_EN = HIGH TX_EN = LOW Control Voltage for Maxi mum Power (VRAMP_MAX) Control Voltage for Mi ni mum Power (VRAMP_MIN) Power Supply Leakage Current VRAMP Input Capaci tance VRAMP Input Current Turn On/Off Ti me Duty Cycle MIN -20 3.0 2.7 T YP 3.5 2.8 6 10 0.2 M AX 85 5.5 2.9 8 30 1.6 0.25 U N IT
o
C OMME N T S
C
V V mA A V V VBATT = 5.5 V, VREG = 0V, VRAMP = 0V, TX_EN = LOW, No RF Appli ed
-
1 3 1 -
10 10 2 50
A pF A s %
VRAMP = VRAMP_MAX VRAMP = 0.2V to VRAMP_MAX
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
4
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
AWT6108 Table 6: Electrical Characteristics for GSM850/900 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 s, Duty 25%, ZIN = ZOUT = 50W, TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PAR AME T E R Operati ng Frequency (FO) Input Power Output Power (PMAX) Degraded Output Power PAE @ PMAX Forward Isolati on 1 Forward Isolati on 2 Cross Isolati on (2FO @ DCS/PCS port) Harmoni cs 2fo 3fo Stabi li ty Ruggedness MIN 824 880 0 34.5 32.0 48 T YP 2 35 32.5 55 -37 -25 -30 -17 -30 M AX 849 915 5 -30 -10 -20 -5 -15 U N IT MHz dBm dBm dBm % dBm dBm dBm Freq = 824 to 915 MHz VBATT = 3.0 V, TC = 85 C, VREG = 2.7 V, PIN = 0 dBm Freq = 824 to 915 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm VRAMP = 0.2 V to VRAMP_MAX C OMME N T S
dBm
Over all output power levels VSWR = 8:1 all phases, POUT < 34.5 dBm FOUT < 1GHz FOUT > 1GHz All load phases, POUT < 34.5 dBm
-
-86
-36 -30 10:1 -83
dBm
dBm
FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm Over all output power levels
RX Noi se Power
-
-81
-77
dBm
Input VSWR -
-86 -
-83 2.5:1
dBm
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
5
AWT6108 Table 7: Electrical Characteristics for DCS/PCS (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 s, Duty 25%, ZIN = ZOUT = 50W, TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PAR AME T E R Operati ng Frequency (FO) Input Power Output Power (PMAX) Degraded Output Power PAE @ PMAX Forward Isolati on 1 Forward Isolati on 2 Harmoni cs 2fo 3fo Stabi li ty Ruggedness MIN 1710 1850 0 32 29.5 45 T YP 2 33 30.5 50 -37 -17 -12 -30 M AX 1785 1910 5 -30 -10 -5 -15 U N IT MHz dBm dBm dBm % dBm dBm VBATT = 3.0 V, TC = 85 C, VREG = 2.7 V, PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels VSWR = 8:1 all phases, POUT < 32 dBm FOUT < 1GHz FOUT > 1GHz All load phases, POUT < 32 dBm dBm FTX = 1785 MHz, FRX = 1805 to 1880 MHz, POUT < 32.0 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32.0 dBm Over all output power levels C OMME N T S
dBm
-
-87
-36 -30 10:1 -80
dBm
RX Noi se Power Input VSWR -87 -80 2.5:1 dBm
6
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
AWT6108
PERFORMANCE DATA
Figure 3: GSM850/GSM900 Pout vs Vramp &Temperature (2 TX slots)
40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us
1.3
1.4
1.5
1.6
Vramp (V)
836.5MHz, +25C 897.5MHz, +25C 836.5MHz, -25C 897.5MHz, -25C 836.5MHz, +85C 897.5MHz, +85C
Figure 4: DCS/PCS Pout vs Vramp & Temperature (2 TX slots)
35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us
Vramp (V)
1747.5MHz,+25C 1880MHz, +25C 1747.5MHz, -25C 1880MHz, -25C 1747.5MHz, +85C 1880MHz, +85C
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
7
AWT6108
Figure 5: GSM850/GSM900 PMAX vs. Temperature @ Vramp=Vrampmax = 1.6V (2TX slots)
38.0 37.5 37.0 36.5 36.0 35.5 35.0 34.5 34.0 33.5 33.0 32.5 32.0 820 830 840 850 860 870 880 890 900 910 920 VBATT = 3.5V, VREG = 2.8V VRAMP = 1.6V, PW = 1154us Pin = 2 dBm
Frequency (MHz)
GSM850, -20C GSM900, -20C GSM850, +25C GSM900, +25C GSM850, +85C GSM900, +85C
Figure 6: DCS/PCS PMAX vs. Temperature @ Vramp = Vrampmax = 1.6V (2TX slots)
35.0 34.8 34.6 34.4 34.2 34.0 33.8 33.6 33.4 33.2 33.0 32.8 32.6 32.4 32.2 32.0 31.8 31.6 31.4 31.2 31.0 1700 1720 1740 1760 1780 1800 1820 VBATT = 3.5V, VREG = 2.8V Temp = +25C, PW = 1154us VRAMP = 1.6V
1840
1860
1880
1900
1920
Frequency (MHz)
DCS -20C PCS -20C DCS +25C PCS +25C DCS +85C PCS +85 C
8
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
AWT6108
PACKAGE OUTLINE
Figure 7: Package Outline
Figure 8: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
9
AWT6108
COMPONENT PACKAGING
Figure 9: Tape & Reel Packaging
Table 8: Tape & Reel Dimensions
PACKAGE TYPE 7mm X 10mm TAPE WIDTH 16mm POCKET PITCH 12mm REEL CAPACITY 2500 MAX REEL DIA 22"
10
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
AWT6108
NOTES
PRELIMINARY DATA SHEET - Rev 1.0 08/2003
11
AWT6108
ORDERING INFORMATION
OR D E R N U MB E R T E MP E R AT U R E R AN GE -30 oC to +110 oC PAC K AGE D E S C R IP T ION 20 Pin 7mm x 10mm Surface Mount Module C OMP ON E N T PAC K AGIN G
AWT6108M10P8
Tape and Reel, 2500 pieces per reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WARNING
12
PRELIMINARY DATA SHEET - Rev 1.0 08/2003

▲Up To Search▲

Price & Availability of AWT6108

	To Download AWT6108 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .